VISHAY IRFP448PBF

Manufacturer No:

IRFP448PBF

Manufacturer:

VISHAY

Package:

FLANGE MOUNT, R-PSFM-T3

Description:

Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3

Quantity:

In Stock :7375

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 21 - Fri, May 22, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IRFP448PBF Information

VISHAY IRFP448PBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFP448PBF.

Type
Parameter

Pbfree Code
Yes

RoHS Status
RoHS Compliant

Part Life Cycle Code
Transferred

Ihs Manufacturer
VISHAY SILICONIX

Part Package Code
TO-247

Package Description
FLANGE MOUNT, R-PSFM-T3

Pin Count
3

Reach Compliance Code
compliant

ECCN Code
EAR99

Samacsys Manufacturer
Vishay

Type
Parameter

Additional Feature
AVALANCHE RATED

Avalanche Energy Rating (Eas)
550 mJ

Configuration
SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min
500 V

Drain Current-Max (ID)
11 A

Drain-source On Resistance-Max
0.6 Ω

FET Technology
METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code
TO-247

JESD-30 Code
R-PSFM-T3

JESD-609 Code
e3

Download datasheets and manufacturer documentation for VISHAY IRFP448PBF.

IRFP448PBF Overview

The maximum input capacitance of this device is 1900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 62 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 600mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFP448PBF Features

a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 62 ns
single MOSFETs transistor is 600mOhm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)