VISHAY IRFP440PBF

Manufacturer No:

IRFP440PBF

Manufacturer:

VISHAY

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 850mOhm @ 5.3A, 10V ±20V 1300pF @ 25V 63nC @ 10V 500V TO-247-3

Quantity:

In Stock :2714

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 21 - Fri, May 22, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFP440PBF Information

VISHAY IRFP440PBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFP440PBF.

Type
Parameter

Factory Lead Time
8 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-247-3

Number of Pins
3

Supplier Device Package
TO-247-3

Weight
38.000013g

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Part Status
Active

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Termination
Through Hole

Resistance
850mOhm

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Voltage - Rated DC
500V

Technology
MOSFET (Metal Oxide)

Current Rating
8.8A

Lead Pitch
5.45mm

Number of Elements
1

Download datasheets and manufacturer documentation for VISHAY IRFP440PBF.

IRFP440PBF Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.8A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [49 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 850mOhm.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFP440PBF Features

a continuous drain current (ID) of 8.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 49 ns
single MOSFETs transistor is 850mOhm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)