

INFINEON IRFP4229PBF
Manufacturer No:
IRFP4229PBF
Manufacturer:
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 46m ? @ 26A, 10V ±30V 4560pF @ 25V 110nC @ 10V TO-247-3
Quantity:


In Stock :1963
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFP4229PBF Information
INFINEON IRFP4229PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFP4229PBF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2006
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Termination
- Through Hole
- ECCN Code
- EAR99
- Resistance
- 46MOhm
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Power Dissipation-Max
- 310W Tc
Download datasheets and manufacturer documentation for INFINEON IRFP4229PBF.
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IRFP4229PBF Description
The IRFP4229PBF is a HEXFET? single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery, and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175??C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust, and reliable device for PDP driving applications. IRFP4229PBF is an N-channel PDP switch HEXFET? power MOSFET designed specifically for sustain, energy recovery, and pass switch applications in plasma displays.
Using the latest processing techniques, it achieves low ON-resistance per silicon area and low EPULSE ratings. The IRFP4229PBF MOSFET also has a high repetitive peak current capability and a junction temperature of 175??C. The IRFP4229PBF is highly efficient, robust, and reliable for PDP driving applications due to these factors.
IRFP4229PBF Features
High-current rating
Industry-standard through-hole power package
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
IRFP4229PBF Applications
UPS
SMPS
DC motor drives
Solar power inverter
Power Management
Consumer Electronics
IRFP4229PBF Relevant information
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