INFINEON IRFP250NPBF

Manufacturer No:

IRFP250NPBF

Manufacturer:

INFINEON

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 75m ? @ 18A, 10V ±20V 2159pF @ 25V 123nC @ 10V TO-247-3

Quantity:

In Stock :6227

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 10 - Mon, May 11, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFP250NPBF Information

INFINEON IRFP250NPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFP250NPBF.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-247-3

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2004

Type
Parameter

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Termination
Through Hole

ECCN Code
EAR99

Resistance
75mOhm

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Subcategory
FET General Purpose Power

Download datasheets and manufacturer documentation for INFINEON IRFP250NPBF.

IRFP250NPBF Overview

The maximum input capacitance of this device is 2159pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 41 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.