

INFINEON IRFP150N
Manufacturer No:
IRFP150N
Manufacturer:
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Bulk 36m ? @ 23A, 10V ±20V 1900pF @ 25V 110nC @ 10V 100V TO-247-3
Quantity:


In Stock :7393
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFP150N Information
INFINEON IRFP150N technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFP150N.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Bulk
- Series
- HEXFET®
- Published
- 1998
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Additional Feature
- AVALANCHE RATED, FAST SWITCHING
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Qualification Status
- Not Qualified
- Number of Elements
- 1
Download datasheets and manufacturer documentation for INFINEON IRFP150N.
Other Related Documents:
IRFP150N Description
With a voltage of 100V, the IRFP150N is a HEXFET Power MOSFET from Infineon Technologies. International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The TO-247 package is recommended for commercial and industrial applications where TO-220 devices are not suitable. Because of its isolated mounting hole, the TO-247 is similar to but superior to the older TO-218 package.
IRFP150N Features
Advanced Process Technology
Dynamic DV/DT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
IRFP150N Applications
General-purpose amplifier
Switching applications
Power management
Industrial
IRFP150N Relevant information
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