INFINEON IRFP140NPBF
INFINEON IRFP140NPBF

INFINEON IRFP140NPBF

Manufacturer No:

IRFP140NPBF

Manufacturer:

INFINEON

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel Bulk 52m ? @ 16A, 10V ±20V 1400pF @ 25V 94nC @ 10V TO-247-3

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In Stock :2285

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Shipped from:HK Warehouse
Expected Shipping:Sun, May 10 - Mon, May 11, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFP140NPBF Information

INFINEON IRFP140NPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFP140NPBF.

  • Type
  • Parameter
  • Factory Lead Time
  • 12 Weeks
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-247-3
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~175°C TJ
  • Packaging
  • Bulk
  • Series
  • HEXFET®
  • Published
  • 1998
  • Type
  • Parameter
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • Termination
  • Through Hole
  • ECCN Code
  • EAR99
  • Resistance
  • 52mOhm
  • Additional Feature
  • AVALANCHE RATED
  • Subcategory
  • FET General Purpose Power
  • Voltage - Rated DC
  • 100V
  • Technology
  • MOSFET (Metal Oxide)

IRFP140NPBF Overview


The maximum input capacitance of this device is 1400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 33A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 44 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRFP140NPBF Features


a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
a threshold voltage of 4V


IRFP140NPBF Applications


There are a lot of Infineon Technologies
IRFP140NPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,