Rochester IRFP140
Manufacturer No:
IRFP140
Manufacturer:
Rochester
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 77m ? @ 19A, 10V 1.7pF @ 25V 72nC @ 10V 100V TO-247-3
Quantity:
In Stock :3578
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFP140 Information
Rochester IRFP140 technical specifications, attributes, parameters and parts with similar specifications to Rochester IRFP140.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Packaging
- Tube
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Type
- Parameter
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
- Qualification Status
- COMMERCIAL
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 77m ? @ 19A, 10V
Download datasheets and manufacturer documentation for Rochester IRFP140.
IRFP140 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The maximum input capacitance of this device is 1.7pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 31A.There is no pulsed drain current maximum for this device based on its rated peak drain current 120A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.
IRFP140 Features
the avalanche energy rating (Eas) is 100 mJ
based on its rated peak drain current 120A.
a 100V drain to source voltage (Vdss)
IRFP140 Applications
There are a lot of Rochester Electronics, LLC
IRFP140 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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