VISHAY IRFL014TRPBF
Manufacturer No:
IRFL014TRPBF
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 200mOhm @ 1.6A, 10V ±20V 300pF @ 25V 11nC @ 10V 60V TO-261-4, TO-261AA
Quantity:
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IRFL014TRPBF Information
VISHAY IRFL014TRPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFL014TRPBF.
- Type
- Parameter
- Factory Lead Time
- 8 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Number of Pins
- 4
- Supplier Device Package
- SOT-223
- Weight
- 250.212891mg
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1997
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Resistance
- 200mOhm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 2W Ta 3.1W Tc
- Power Dissipation
- 2W
Download datasheets and manufacturer documentation for VISHAY IRFL014TRPBF.
Datasheets:
RohsStatement:
IRFL014TRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 13 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 200mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFL014TRPBF Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFL014TRPBF Applications
There are a lot of Vishay Siliconix
IRFL014TRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
IRFL014TRPBF Relevant information
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