Harris IRFF423
Manufacturer No:
IRFF423
Manufacturer:
Harris
Package:
TO-205AF Metal Can
Description:
MOSFET (Metal Oxide) N-Channel 4Ohm @ 1A, 10V ±20V 300 pF @ 25 V 15 nC @ 10 V 450 V TO-205AF Metal Can
Quantity:
In Stock :3669
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFF423 Information
Harris IRFF423 technical specifications, attributes, parameters and parts with similar specifications to Harris IRFF423.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-205AF Metal Can
- Supplier Device Package
- TO-205AF (TO-39)
- Mfr
- Harris Corporation
- Package
- Bulk
- Product Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Power Dissipation (Max)
- 20W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 300 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C
- 1.4A (Tc)
- Gate Charge (Qg) (Max) @ Vgs
- 15 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 450 V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for Harris IRFF423.
IRFF423 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 300 pF @ 25 V.Operating this transistor requires a 450 V drain to source voltage (Vdss).
IRFF423 Features
a 450 V drain to source voltage (Vdss)
IRFF423 Applications
There are a lot of Harris Corporation
IRFF423 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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