VISHAY IRFBC40STRLPBF

Manufacturer No:

IRFBC40STRLPBF

Manufacturer:

VISHAY

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.2Ohm @ 3.7A, 10V ±20V 1300pF @ 25V 60nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :7594

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFBC40STRLPBF Information

VISHAY IRFBC40STRLPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFBC40STRLPBF.

Type
Parameter

Factory Lead Time
11 Weeks

Contact Plating
Tin

Mount
Surface Mount, Through Hole

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins
3

Supplier Device Package
D2PAK

Weight
1.437803g

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Type
Parameter

Published
2008

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Resistance
1.2Ohm

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
3.1W Ta 130W Tc

Download datasheets and manufacturer documentation for VISHAY IRFBC40STRLPBF.

Datasheets:

vishaysiliconix-irfbc40spbf-datasheets-1879.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRFBC40STRLPBF Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6.2A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 1.2Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFBC40STRLPBF Features

a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)