VISHAY IRFBC40PBF
Manufacturer No:
IRFBC40PBF
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 1.2Ohm @ 3.7A, 10V ±20V 1300pF @ 25V 60nC @ 10V 600V TO-220-3
Quantity:
In Stock :8502
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IRFBC40PBF Information
VISHAY IRFBC40PBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFBC40PBF.
- Type
- Parameter
- Factory Lead Time
- 11 Weeks
- Contact Plating
- Tin
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Supplier Device Package
- TO-220AB
- Weight
- 6.000006g
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Type
- Parameter
- Published
- 2008
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Resistance
- 1.2Ohm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 600V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 6.2A
- Number of Elements
- 1
Download datasheets and manufacturer documentation for VISHAY IRFBC40PBF.
Datasheets:
Other Related Documents:
RohsStatement:
IRFBC40PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.2Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFBC40PBF Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC40PBF Applications
There are a lot of Vishay Siliconix
IRFBC40PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
IRFBC40PBF Relevant information
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