VISHAY IRFBC40LPBF
VISHAY IRFBC40LPBF

VISHAY IRFBC40LPBF

Manufacturer No:

IRFBC40LPBF

Manufacturer:

VISHAY

Package:

TO-262-3 Long Leads, I2Pak, TO-262AA

Description:

MOSFET (Metal Oxide) N-Channel Tube 1.2Ohm @ 3.7A, 10V ±20V 1300pF @ 25V 60nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA

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In Stock :1756

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Shipped from:HK Warehouse
Expected Shipping:Thu, May 7 - Fri, May 8, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

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Step3:Vacuum Packaging

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Step4:Individual Package

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Step5:Anti-collision Filling

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Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFBC40LPBF Information

VISHAY IRFBC40LPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFBC40LPBF.

  • Type
  • Parameter
  • Factory Lead Time
  • 8 Weeks
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-262-3 Long Leads, I2Pak, TO-262AA
  • Number of Pins
  • 3
  • Supplier Device Package
  • TO-262-3
  • Weight
  • 2.387001g
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tube
  • Published
  • 2016
  • Type
  • Parameter
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Max Operating Temperature
  • 150°C
  • Min Operating Temperature
  • -55°C
  • Technology
  • MOSFET (Metal Oxide)
  • Number of Channels
  • 1
  • Power Dissipation-Max
  • 3.1W Ta 130W Tc
  • Element Configuration
  • Single
  • Turn On Delay Time
  • 13 ns
  • FET Type
  • N-Channel

Download datasheets and manufacturer documentation for VISHAY IRFBC40LPBF.

IRFBC40LPBF Overview


A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.2Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFBC40LPBF Features


a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)


IRFBC40LPBF Applications


There are a lot of Vishay Siliconix
IRFBC40LPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters