VISHAY IRFBC40APBF

Manufacturer No:

IRFBC40APBF

Manufacturer:

VISHAY

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 1.2Ohm @ 3.7A, 10V ±30V 1036pF @ 25V 42nC @ 10V 600V TO-220-3

Quantity:

In Stock :5231

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFBC40APBF Information

VISHAY IRFBC40APBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFBC40APBF.

Type
Parameter

Factory Lead Time
8 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Supplier Device Package
TO-220AB

Weight
6.000006g

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Published
2004

Type
Parameter

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Resistance
1.2Ohm

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Voltage - Rated DC
600V

Technology
MOSFET (Metal Oxide)

Current Rating
6.2A

Number of Elements
1

Number of Channels
1

Download datasheets and manufacturer documentation for VISHAY IRFBC40APBF.

Datasheets:

vishaysiliconix-irfbc40apbf-datasheets-3638.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRFBC40APBF Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1036pF @ 25V.This device conducts a continuous drain current (ID) of 6.2A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 31 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFBC40APBF Features

a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)