VISHAY IRFBC40

Manufacturer No:

IRFBC40

Manufacturer:

VISHAY

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 1.2Ohm @ 3.7A, 10V ±20V 1300pF @ 25V 60nC @ 10V 600V TO-220-3

Quantity:

In Stock :9126

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFBC40 Information

VISHAY IRFBC40 technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFBC40.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Supplier Device Package
TO-220AB

Weight
6.000006g

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Published
2016

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
125W Tc

Element Configuration
Single

Power Dissipation
125W

Turn On Delay Time
13 ns

Download datasheets and manufacturer documentation for VISHAY IRFBC40.

Datasheets:

vishaysiliconix-irfbc40pbf-datasheets-2495.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRFBC40 Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.2Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFBC40 Features

a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)