VISHAY IRFBC30PBF
Manufacturer No:
IRFBC30PBF
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 2.2Ohm @ 2.2A, 10V ±20V 660pF @ 25V 31nC @ 10V 600V TO-220-3
Quantity:


In Stock :8634
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IRFBC30PBF Information
VISHAY IRFBC30PBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFBC30PBF.
- Type
- Parameter
- Factory Lead Time
- 11 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Supplier Device Package
- TO-220AB
- Weight
- 6.000006g
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2007
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Resistance
- 2.2Ohm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Number of Channels
- 1
- Voltage
- 600V
- Power Dissipation-Max
- 74W Tc
Download datasheets and manufacturer documentation for VISHAY IRFBC30PBF.
Datasheets:
Other Related Documents:
RohsStatement:
IRFBC30PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 660pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.6A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 2.2Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFBC30PBF Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC30PBF Applications
There are a lot of Vishay Siliconix
IRFBC30PBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
IRFBC30PBF Relevant information
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