VISHAY IRFBC30ASTRRPBF

Manufacturer No:

IRFBC30ASTRRPBF

Manufacturer:

VISHAY

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.2Ohm @ 2.2A, 10V ±30V 510pF @ 25V 23nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :1467

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Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFBC30ASTRRPBF Information

VISHAY IRFBC30ASTRRPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFBC30ASTRRPBF.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins
3

Supplier Device Package
D2PAK

Weight
1.437803g

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2015

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Current Rating
3.6A

Number of Channels
1

Power Dissipation-Max
74W Tc

Element Configuration
Single

Turn On Delay Time
9.8 ns

FET Type
N-Channel

Download datasheets and manufacturer documentation for VISHAY IRFBC30ASTRRPBF.

Datasheets:

vishaysiliconix-irfbc30astrlpbf-datasheets-5227.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRFBC30ASTRRPBF Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 510pF @ 25V.This device conducts a continuous drain current (ID) of 3.6A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2.2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFBC30ASTRRPBF Features

a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)