VISHAY IRFBC30ASPBF
VISHAY IRFBC30ASPBF

VISHAY IRFBC30ASPBF

Manufacturer No:

IRFBC30ASPBF

Manufacturer:

VISHAY

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tube 2.2Ohm @ 2.2A, 10V ±30V 510pF @ 25V 23nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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In Stock :1044

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Shipped from:HK Warehouse
Expected Shipping:Thu, May 7 - Fri, May 8, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

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Step2:Desiccant Protection

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Step4:Individual Package

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFBC30ASPBF Information

VISHAY IRFBC30ASPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFBC30ASPBF.

  • Type
  • Parameter
  • Factory Lead Time
  • 8 Weeks
  • Contact Plating
  • Tin
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Number of Pins
  • 3
  • Supplier Device Package
  • D2PAK
  • Weight
  • 1.437803g
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tube
  • Type
  • Parameter
  • Published
  • 2016
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Max Operating Temperature
  • 150°C
  • Min Operating Temperature
  • -55°C
  • Technology
  • MOSFET (Metal Oxide)
  • Number of Elements
  • 1
  • Number of Channels
  • 1
  • Power Dissipation-Max
  • 74W Tc
  • Element Configuration
  • Single

Download datasheets and manufacturer documentation for VISHAY IRFBC30ASPBF.

IRFBC30ASPBF Overview


The maximum input capacitance of this device is 510pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.6A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2.2Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFBC30ASPBF Features


a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)


IRFBC30ASPBF Applications


There are a lot of Vishay Siliconix
IRFBC30ASPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,