VISHAY IRFBC20SPBF

Manufacturer No:

IRFBC20SPBF

Manufacturer:

VISHAY

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tube 4.4Ohm @ 1.3A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :2484

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Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFBC20SPBF Information

VISHAY IRFBC20SPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFBC20SPBF.

Type
Parameter

Factory Lead Time
8 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins
3

Supplier Device Package
D2PAK

Weight
1.437803g

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Published
1997

Type
Parameter

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Resistance
4.4Ohm

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
3.1W Ta 50W Tc

Element Configuration
Single

Download datasheets and manufacturer documentation for VISHAY IRFBC20SPBF.

Datasheets:

vishaysiliconix-irfbc20strlpbf-datasheets-2593.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRFBC20SPBF Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 350pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 4.4Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFBC20SPBF Features

a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)