

INFINEON IRFB4510PBF
Manufacturer No:
IRFB4510PBF
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 13.5m ? @ 37A, 10V ±20V 3180pF @ 50V 87nC @ 10V 100V TO-220-3
Quantity:


In Stock :9395
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRFB4510PBF Information
INFINEON IRFB4510PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFB4510PBF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2008
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Power Dissipation-Max
- 140W Tc
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for INFINEON IRFB4510PBF.
Datasheets:
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PCN Packaging:
ConflictMineralStatement:
IRFB4510PBF Description
Power MOSFET IRFB4510PBF is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V-shaped structure. Therefore, it is also known as Vmur MOSFET.VFET.
IRFB4510PBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRFB4510PBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
IRFB4510PBF Relevant information
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