INFINEON IRFB4020PBF
Manufacturer No:
IRFB4020PBF
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 100m ? @ 11A, 10V ±20V 1200pF @ 50V 29nC @ 10V TO-220-3
Quantity:
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IRFB4020PBF Information
INFINEON IRFB4020PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFB4020PBF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Published
- 2006
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Termination
- Through Hole
- ECCN Code
- EAR99
- Resistance
- 100MOhm
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Power Dissipation-Max
- 100W Tc
- Element Configuration
- Single
Download datasheets and manufacturer documentation for INFINEON IRFB4020PBF.
Datasheets:
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IRFB4020PBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 94 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 50V.This device conducts a continuous drain current (ID) of 18A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 16 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 52A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4.9V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFB4020PBF Features
the avalanche energy rating (Eas) is 94 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 52A.
a threshold voltage of 4.9V
IRFB4020PBF Applications
There are a lot of Infineon Technologies
IRFB4020PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
IRFB4020PBF Relevant information
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