INFINEON IRFB3806PBF
INFINEON IRFB3806PBF

INFINEON IRFB3806PBF

Manufacturer No:

IRFB3806PBF

Manufacturer:

INFINEON

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 15.8m ? @ 25A, 10V ±20V 1150pF @ 50V 30nC @ 10V TO-220-3

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In Stock :9725

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Shipped from:HK Warehouse
Expected Shipping:Thu, May 21 - Fri, May 22, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRFB3806PBF Information

INFINEON IRFB3806PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFB3806PBF.

  • Type
  • Parameter
  • Factory Lead Time
  • 12 Weeks
  • Contact Plating
  • Tin
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-220-3
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~175°C TJ
  • Packaging
  • Tube
  • Series
  • HEXFET®
  • Type
  • Parameter
  • Published
  • 2008
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Resistance
  • 15.8MOhm
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Number of Elements
  • 1
  • Power Dissipation-Max
  • 71W Tc

IRFB3806PBF Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1150pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 43A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 49 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFB3806PBF Features


a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 49 ns
a threshold voltage of 4V


IRFB3806PBF Applications


There are a lot of Infineon Technologies
IRFB3806PBF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies