INFINEON IRFB3307ZGPBF

Manufacturer No:

IRFB3307ZGPBF

Manufacturer:

INFINEON

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 5.8mOhm @ 75A, 10V ±20V 4750pF @ 50V 110nC @ 10V 75V TO-220-3

Quantity:

In Stock :1007

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Expected Shipping：Sat, May 9 - Sun, May 10, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IRFB3307ZGPBF Information

INFINEON IRFB3307ZGPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFB3307ZGPBF.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Supplier Device Package
TO-220AB

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2008

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Resistance
5.8MOhm

Max Operating Temperature
175°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Power Dissipation-Max
230W Tc

Element Configuration
Single

Power Dissipation
230W

Turn On Delay Time
15 ns

Download datasheets and manufacturer documentation for INFINEON IRFB3307ZGPBF.

Datasheets:

infineontechnologies-irfb3307zgpbf-datasheets-8247.pdf

infineon-irfb3307zgpbf-datasheets-3234.pdf

infineon-irfb3307zgpbf-datasheets-3235.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRFB3307ZGPBF Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4750pF @ 50V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=75V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 75V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 5.8mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 75V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFB3307ZGPBF Features

a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 5.8mOhm
a 75V drain to source voltage (Vdss)