VISHAY IRF9640S
Manufacturer No:
IRF9640S
Manufacturer:
Package:
TO-263, D2PAK-3
Description:
Description: Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3
Quantity:


In Stock :6320
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IRF9640S Information
VISHAY IRF9640S technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRF9640S.
- Type
- Parameter
- RoHS Status
- Non-RoHS Compliant
- Part Life Cycle Code
- Obsolete
- Ihs Manufacturer
- VISHAY SILICONIX
- Part Package Code
- D2PAK
- Package Description
- TO-263, D2PAK-3
- Pin Count
- 4
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Samacsys Manufacturer
- Vishay
- Additional Feature
- AVALANCHE RATED
- Type
- Parameter
- Avalanche Energy Rating (Eas)
- 700 mJ
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 200 V
- Drain Current-Max (ID)
- 11 A
- Drain-source On Resistance-Max
- 0.5 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code
- TO-263AB
- JESD-30 Code
- R-PSSO-G2
- JESD-609 Code
- e0
- Number of Elements
- 1
Download datasheets and manufacturer documentation for VISHAY IRF9640S.
RohsStatement:
IRF9640S Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -200V.As a result of its turn-off delay time, which is 39 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 500mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF9640S Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a 200V drain to source voltage (Vdss)
IRF9640S Applications
There are a lot of Vishay Siliconix
IRF9640S applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
IRF9640S Relevant information
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