VISHAY IRF9630S
Manufacturer No:
IRF9630S
Manufacturer:
Package:
TO-263, D2PAK-3
Description:
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3
Quantity:
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IRF9630S Information
VISHAY IRF9630S technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRF9630S.
- Type
- Parameter
- Part Life Cycle Code
- Obsolete
- Ihs Manufacturer
- VISHAY SILICONIX
- Part Package Code
- D2PAK
- Package Description
- TO-263, D2PAK-3
- Pin Count
- 4
- Reach Compliance Code
- unknown
- ECCN Code
- EAR99
- Samacsys Manufacturer
- Vishay
- Additional Feature
- AVALANCHE RATED
- Avalanche Energy Rating (Eas)
- 500 mJ
- Type
- Parameter
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 200 V
- Drain Current-Max (ID)
- 6.5 A
- Drain-source On Resistance-Max
- 0.8 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code
- TO-263AB
- JESD-30 Code
- R-PSSO-G2
- JESD-609 Code
- e0
- Number of Elements
- 1
Download datasheets and manufacturer documentation for VISHAY IRF9630S.
RohsStatement:
IRF9630S Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 700pF @ 25V.This device conducts a continuous drain current (ID) of 6.5A, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 800mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF9630S Features
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 28 ns
single MOSFETs transistor is 800mOhm
a 200V drain to source voltage (Vdss)
IRF9630S Applications
There are a lot of Vishay Siliconix
IRF9630S applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
IRF9630S Relevant information
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