

INFINEON IRF9530NSTRRPBF
Manufacturer No:
IRF9530NSTRRPBF
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
P-Channel Tape & Reel (TR) 200m Ω @ 8.4A, 10V ±20V 760pF @ 25V 58nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :8166
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Step2:Desiccant Protection

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Step6:Packaging Box
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IRF9530NSTRRPBF Information
INFINEON IRF9530NSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF9530NSTRRPBF.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 14A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 3.8W Ta 79W Tc
- Operating Temperature
- -55°C~175°C TJ
- Type
- Parameter
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- Published
- 1998
- JESD-609 Code
- e3
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
Download datasheets and manufacturer documentation for INFINEON IRF9530NSTRRPBF.
Other Related Documents:
PCN Design/Specification:
PCN Assembly/Origin:
PCN Packaging:
IRF9530NSTRRPBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 250 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 760pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 14A.A maximum pulsed drain current of 56A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).
IRF9530NSTRRPBF Features
the avalanche energy rating (Eas) is 250 mJ
based on its rated peak drain current 56A.
a 100V drain to source voltage (Vdss)
IRF9530NSTRRPBF Applications
There are a lot of Infineon Technologies
IRF9530NSTRRPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
IRF9530NSTRRPBF Relevant information
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