INFINEON IRF9530NLPBF

Manufacturer No:

IRF9530NLPBF

Manufacturer:

INFINEON

Package:

Description:

-100 V

Quantity:

In Stock :5711

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Shipped from：HK Warehouse

Expected Shipping：Sat, May 9 - Sun, May 10, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF9530NLPBF Information

INFINEON IRF9530NLPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF9530NLPBF.

Type
Parameter

Mount
Through Hole

Number of Pins
3

Turn-On Delay Time
15 ns

RoHS Status
RoHS Compliant

Max Operating Temperature
175 °C

Min Operating Temperature
-55 °C

Number of Elements
1

Power Dissipation
79 W

Rise Time
58 ns

Drain to Source Voltage (Vdss)
-100 V

Type
Parameter

Turn-Off Delay Time
45 ns

Continuous Drain Current (ID)
14 A

Gate to Source Voltage (Vgs)
20 V

Drain to Source Breakdown Voltage
-100 V

Input Capacitance
760 pF

Drain to Source Resistance
200 mΩ

Width
4.826 mm

Height
9.652 mm

Length
10.668 mm

Radiation Hardening
No

Download datasheets and manufacturer documentation for INFINEON IRF9530NLPBF.

IRF9530NLPBF Overview

This device conducts a continuous drain current (ID) of 14 A, which is the maximum continuous current transistor can conduct.Using VGS=-100 V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100 V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 200 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20 V.This transistor requires a drain-source voltage (Vdss) of -100 V.

IRF9530NLPBF Features

a continuous drain current (ID) of 14 A
a drain-to-source breakdown voltage of -100 V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 200 mΩ
a -100 V drain to source voltage (Vdss)