Harris IRF831
Manufacturer No:
IRF831
Manufacturer:
Harris
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel 1.5Ohm @ 2.5A, 10V ±20V 600 pF @ 25 V 32 nC @ 10 V 450 V TO-220-3
Quantity:
In Stock :8325
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Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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IRF831 Information
Harris IRF831 technical specifications, attributes, parameters and parts with similar specifications to Harris IRF831.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220AB
- Mfr
- Harris Corporation
- Product Status
- Active
- Package
- Bulk
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Power Dissipation (Max)
- 75W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 1.5Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 600 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C
- 4.5A (Tc)
- Gate Charge (Qg) (Max) @ Vgs
- 32 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 450 V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for Harris IRF831.
IRF831 Overview
The maximum input capacitance of this device is 600 pF @ 25 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 450 V in order to operate.
IRF831 Features
a 450 V drain to source voltage (Vdss)
IRF831 Applications
There are a lot of Harris Corporation
IRF831 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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