INFINEON IRF8113GPBF
Manufacturer No:
IRF8113GPBF
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 5.6mOhm @ 17.2A, 10V ±20V 2910pF @ 15V 36nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :1749
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Expected Shipping：Tue, Jun 16 - Wed, Jun 17, 2026
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Date Code：Within 2 Years
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IRF8113GPBF Information
INFINEON IRF8113GPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF8113GPBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SO
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2009
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Power Dissipation-Max
- 2.5W Ta
- Power Dissipation
- 2.5W
- Turn On Delay Time
- 13 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 5.6mOhm @ 17.2A, 10V
Download datasheets and manufacturer documentation for INFINEON IRF8113GPBF.
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ConflictMineralStatement:
IRF8113GPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2910pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17.2A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 7.4mOhm.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF8113GPBF Features
a continuous drain current (ID) of 17.2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 7.4mOhm
a 30V drain to source voltage (Vdss)
IRF8113GPBF Applications
There are a lot of Infineon Technologies
IRF8113GPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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