

INFINEON IRF8010SPBF
Manufacturer No:
IRF8010SPBF
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tube 15m ? @ 45A, 10V ±20V 3830pF @ 25V 120nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :3466
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF8010SPBF Information
INFINEON IRF8010SPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF8010SPBF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2003
- JESD-609 Code
- e3
- Part Status
- Discontinued
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 30
Download datasheets and manufacturer documentation for INFINEON IRF8010SPBF.
Other Related Documents:
PCN Design/Specification:
PCN Packaging:
PCN Part Status Change:
IRF8010SPBF Description
IRF8010SPBF is a 100v HEXFET Power MOSFET. The Infineon IRF8010SPBF can be applied in high-frequency DC-DC converters, and UPS and Motor Control applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175?. And the transistor IRF8010SPBF is in the D2Pak package with 260 power dissipation.
IRF8010SPBF Features
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective Coss to Simplify Design
Fully Characterized Avalanche Voltage and Current
Typical Ros(on) = 12mQ
Lead-Free
IRF8010SPBF Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
High-frequency DC-DC converters
UPS and Motor Control
IRF8010SPBF Relevant information
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