INFINEON IRF7832TR
Manufacturer No:
IRF7832TR
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 4m ? @ 20A, 10V 4310pF @ 15V 51nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :2650
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF7832TR Information
INFINEON IRF7832TR technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7832TR.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Packaging
- Cut Tape (CT)
- Series
- HEXFET®
- Published
- 2005
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-G8
- Qualification Status
- Not Qualified
Download datasheets and manufacturer documentation for INFINEON IRF7832TR.
Other Related Documents:
IRF7832TR Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 260 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4310pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [20A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 160A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).
IRF7832TR Features
the avalanche energy rating (Eas) is 260 mJ
based on its rated peak drain current 160A.
a 30V drain to source voltage (Vdss)
IRF7832TR Applications
There are a lot of Infineon Technologies
IRF7832TR applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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12.28 M
Listed Part Number
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