INFINEON IRF7822PBF
Manufacturer No:
IRF7822PBF
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 6.5mOhm @ 15A, 4.5V ±12V 5500pF @ 16V 60nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :5961
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 9 - Wed, Jun 10, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF7822PBF Information
INFINEON IRF7822PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7822PBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SO
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2001
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 18A
- Number of Elements
- 1
- Row Spacing
- 6.3 mm
- Power Dissipation-Max
- 3.1W Ta
- Power Dissipation
- 3.1W
Download datasheets and manufacturer documentation for INFINEON IRF7822PBF.
Other Related Documents:
ConflictMineralStatement:
IRF7822PBF Overview
A device's maximum input capacitance is 5500pF @ 16V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 18A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 6.5mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V) to reduce its overall power consumption.
IRF7822PBF Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 6.5mOhm
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)
IRF7822PBF Applications
There are a lot of Infineon Technologies
IRF7822PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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