INFINEON IRF7811AVTR
Manufacturer No:
IRF7811AVTR
Manufacturer:
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 14m ? @ 15A, 4.5V ±20V 1801pF @ 10V 26nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:


In Stock :6273
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF7811AVTR Information
INFINEON IRF7811AVTR technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7811AVTR.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- Published
- 2005
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- Terminal Finish
- Matte Tin (Sn)
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 30
Download datasheets and manufacturer documentation for INFINEON IRF7811AVTR.
Other Related Documents:
IRF7811AVTR Description
In order to achieve an unheard-of balance between on-resistance and gate charge, this innovative gadget makes use of cutting-edge HEXFET Power MOSFET technology. It is perfect for high efficiency DC-DC converters that power the newest generation of microprocessors because to the decreased conduction and switching losses.
All crucial synchronous buck converter parameters, including as RDS(on), gate charge, and Cdv/dt-induced turn-on immunity, have been optimized for the IRF7811AV. For decreased losses in both control and synchronous FET applications, the IRF7811AV provides an incredibly low combination of Qsw & RDS(on). The package is made for wave, convection, vapor phase, and infrared soldering processes. In a typical PCB mount application, it is feasible to dissipate more power than 2W.
IRF7811AVTR Features
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current applications
100% RG Tested
Lead-Free
IRF7811AVTR Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF7811AVTR Relevant information
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