INFINEON IRF7811AVPBF
Manufacturer No:
IRF7811AVPBF
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 14m ? @ 15A, 4.5V ±20V 1801pF @ 10V 26nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :1436
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF7811AVPBF Information
INFINEON IRF7811AVPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7811AVPBF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2004
- JESD-609 Code
- e3
- Part Status
- Discontinued
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 30
- JESD-30 Code
- R-PDSO-G8
Download datasheets and manufacturer documentation for INFINEON IRF7811AVPBF.
Other Related Documents:
PCN Assembly/Origin:
IRF7811AVPBF Description
The on-resistance and gate charge of this revolutionary device are balanced in a way that has never before been possible thanks to cutting-edge HEXFET Power MOSFET technology. It is perfect for high efficiency DC-DC converters, which power the most recent generation of microprocessors, because to the decreased conduction and switching losses.
The IRF7811AV has been tuned for all synchronous buck converter characteristics, such as RDS(on), gate charge, and Cdv/dt-induced turn-on immunity. Reduced losses in both control and synchronous FET applications are provided by the IRF7811AV's exceptionally low Qsw & RDS(on) combo. The packaging is made for wave, convection, infrared, and vapor phase soldering methods. In a typical PCB mount application, power dissipation of more than 2W is achievable.
IRF7811AVPBF Features
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current applications
100% RG Tested
Lead-Free
IRF7811AVPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
