INFINEON IRF7809AVTRPBF

Manufacturer No:

IRF7809AVTRPBF

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 9m ? @ 15A, 4.5V ±12V 3780pF @ 16V 62nC @ 5V 8-SOIC (0.154, 3.90mm Width)

Quantity:

In Stock :7619

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Shipped from：HK Warehouse

Expected Shipping：Mon, May 11 - Tue, May 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF7809AVTRPBF Information

INFINEON IRF7809AVTRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7809AVTRPBF.

Type
Parameter

Factory Lead Time
12 Weeks

Contact Plating
Tin

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154, 3.90mm Width)

Number of Pins
8

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Type
Parameter

Published
2005

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
8

Resistance
9MOhm

Voltage - Rated DC
30V

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Current Rating
13.3A

Download datasheets and manufacturer documentation for INFINEON IRF7809AVTRPBF.

IRF7809AVTRPBF Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3780pF @ 16V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13.3A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [96 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V).

IRF7809AVTRPBF Features

a continuous drain current (ID) of 13.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 96 ns
a threshold voltage of 1V