INFINEON IRF7807VD2PBF
Manufacturer No:
IRF7807VD2PBF
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 25mOhm @ 7A, 4.5V ±20V 14nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :8039
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Expected Shipping：Tue, Jun 16 - Wed, Jun 17, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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IRF7807VD2PBF Information
INFINEON IRF7807VD2PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7807VD2PBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SO
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- FETKY?
- Published
- 2004
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Termination
- SMD/SMT
- Resistance
- 25MOhm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 8.3A
- Number of Elements
- 1
- Power Dissipation-Max
- 2.5W Ta
Download datasheets and manufacturer documentation for INFINEON IRF7807VD2PBF.
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ConflictMineralStatement:
IRF7807VD2PBF Overview
Its continuous drain current is 8.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 1.1 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 25mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V) to reduce its overall power consumption.
IRF7807VD2PBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 1.1 ns
single MOSFETs transistor is 25mOhm
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)
IRF7807VD2PBF Applications
There are a lot of Infineon Technologies
IRF7807VD2PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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