INFINEON IRF7807D2TRPBF
INFINEON IRF7807D2TRPBF

INFINEON IRF7807D2TRPBF

Manufacturer No:

IRF7807D2TRPBF

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 25mOhm @ 7A, 4.5V ±12V 17nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)

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In Stock :3826

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Shipped from:HK Warehouse
Expected Shipping:Sun, May 10 - Mon, May 11, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF7807D2TRPBF Information

INFINEON IRF7807D2TRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7807D2TRPBF.

  • Type
  • Parameter
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • 8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
  • 8
  • Supplier Device Package
  • 8-SO
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • FETKY?
  • Published
  • 2004
  • Part Status
  • Obsolete
  • Type
  • Parameter
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Resistance
  • 25MOhm
  • Max Operating Temperature
  • 150°C
  • Min Operating Temperature
  • -55°C
  • Voltage - Rated DC
  • 30V
  • Technology
  • MOSFET (Metal Oxide)
  • Current Rating
  • 8.3A
  • Number of Elements
  • 1
  • Power Dissipation-Max
  • 2.5W Ta
  • Element Configuration
  • Single

Download datasheets and manufacturer documentation for INFINEON IRF7807D2TRPBF.

IRF7807D2TRPBF Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8.3A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 25mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V), this device helps reduce its power consumption.

IRF7807D2TRPBF Features


a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
single MOSFETs transistor is 25mOhm
a 30V drain to source voltage (Vdss)


IRF7807D2TRPBF Applications


There are a lot of Infineon Technologies
IRF7807D2TRPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,