INFINEON IRF7807D2PBF
Manufacturer No:
IRF7807D2PBF
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 25mOhm @ 7A, 4.5V ±12V 17nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :4610
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Expected Shipping：Sat, Jun 13 - Sun, Jun 14, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF7807D2PBF Information
INFINEON IRF7807D2PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7807D2PBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SO
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- FETKY?
- Published
- 2004
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 8.3A
- Number of Elements
- 1
- Power Dissipation-Max
- 2.5W Ta
- Power Dissipation
- 2.5W
- FET Type
- N-Channel
Download datasheets and manufacturer documentation for INFINEON IRF7807D2PBF.
Other Related Documents:
ConflictMineralStatement:
IRF7807D2PBF Overview
This device has a continuous drain current (ID) of [8.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.MOSFETs have 25mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V).
IRF7807D2PBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
single MOSFETs transistor is 25mOhm
a 30V drain to source voltage (Vdss)
IRF7807D2PBF Applications
There are a lot of Infineon Technologies
IRF7807D2PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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