INFINEON IRF7805ATRPBF
Manufacturer No:
IRF7805ATRPBF
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 11mOhm @ 7A, 4.5V ±12V 31nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :7460
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Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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IRF7805ATRPBF Information
INFINEON IRF7805ATRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7805ATRPBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SO
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- Published
- 2004
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 13A
- Number of Elements
- 1
- Power Dissipation-Max
- 2.5W Ta
- Power Dissipation
- 2.5W
- Turn On Delay Time
- 16 ns
Download datasheets and manufacturer documentation for INFINEON IRF7805ATRPBF.
Datasheets:
Other Related Documents:
ConflictMineralStatement:
IRF7805ATRPBF Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 11mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 16 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V), this device helps reduce its power consumption.
IRF7805ATRPBF Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 11mOhm
a 30V drain to source voltage (Vdss)
IRF7805ATRPBF Applications
There are a lot of Infineon Technologies
IRF7805ATRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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