

INFINEON IRF7492TRPBF
Manufacturer No:
IRF7492TRPBF
Manufacturer:
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 79mOhm @ 2.2A, 10V ±20V 1820pF @ 25V 59nC @ 10V 200V 8-SOIC (0.154, 3.90mm Width)
Quantity:


In Stock :2075
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF7492TRPBF Information
INFINEON IRF7492TRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7492TRPBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SO
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- Published
- 2007
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Resistance
- 79MOhm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Power Dissipation-Max
- 2.5W Ta
- Element Configuration
- Single
- Power Dissipation
- 2.5W
- Turn On Delay Time
- 15 ns
Download datasheets and manufacturer documentation for INFINEON IRF7492TRPBF.
Datasheets:
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ConflictMineralStatement:
IRF7492TRPBF Description
IRF7492TRPBF belongs to the family of power MOSFETs provided by Infineon Technologies. It is able to minimize switching losses based on low gate-to-drain charges. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including high-frequency DC?DC converters and more.
IRF7492TRPBF Features
Low RDS (on)
Low gate to drain charge
Low switching losses
Fully characterized capacitance
Fully characterized avalanche voltage and current
IRF7492TRPBF Applications
High-frequency DC?DC converters
IRF7492TRPBF Relevant information
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