Rochester IRF7470PBF

Manufacturer No:

IRF7470PBF

Manufacturer:

Rochester

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) N-Channel Tube 13mOhm @ 10A, 10V ±12V 3.43pF @ 20V 44nC @ 4.5V 40V 8-SOIC (0.154, 3.90mm Width)

Quantity:

In Stock :3882

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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MEANS OF PAYMENT

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF7470PBF Information

Rochester IRF7470PBF technical specifications, attributes, parameters and parts with similar specifications to Rochester IRF7470PBF.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154, 3.90mm Width)

Supplier Device Package
8-SO

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
HEXFET®

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Power Dissipation-Max
2.5W Ta

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id
2V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
3.43pF @ 20V

Current - Continuous Drain (Id) @ 25°C
10A Ta

Gate Charge (Qg) (Max) @ Vgs
44nC @ 4.5V

Drain to Source Voltage (Vdss)
40V

Drive Voltage (Max Rds On,Min Rds On)
2.8V 10V

Vgs (Max)
±12V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Rochester IRF7470PBF.

Datasheets:

rochesterelectronicsllc-irf8736pbf-datasheets-5481.pdf

rochesterelectronicsllc-irf7104pbf-datasheets-5338.pdf

IRF7470PBF Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3.43pF @ 20V maximal input capacitance.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.8V 10V).