INFINEON IRF7468TRPBF

Manufacturer No:

IRF7468TRPBF

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 15.5m ? @ 9.4A, 10V ±12V 2460pF @ 20V 34nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)

Quantity:

In Stock :5558

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Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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IRF7468TRPBF Information

INFINEON IRF7468TRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7468TRPBF.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154, 3.90mm Width)

Number of Pins
8

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2004

Type
Parameter

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
8

Resistance
15.5MOhm

Additional Feature
AVALANCHE RATED

Voltage - Rated DC
40V

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Current Rating
9.4A

Download datasheets and manufacturer documentation for INFINEON IRF7468TRPBF.

IRF7468TRPBF Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2460pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 9.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 75A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7.6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRF7468TRPBF Features

a continuous drain current (ID) of 9.4A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 75A.