

INFINEON IRF7465
Manufacturer No:
IRF7465
Manufacturer:
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 280m ? @ 1.14A, 10V ±30V 330pF @ 25V 15nC @ 10V 150V 8-SOIC (0.154, 3.90mm Width)
Quantity:


In Stock :7860
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF7465 Information
INFINEON IRF7465 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7465.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2001
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- TIN LEAD
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 245
- Time@Peak Reflow Temperature-Max (s)
- 30
- JESD-30 Code
- R-PDSO-G8
Download datasheets and manufacturer documentation for INFINEON IRF7465.
Other Related Documents:
IRF7465 Description
IRF7465 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 150V. The operating temperature of the IRF7465 is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7465 has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7465 is 150V.
IRF7465 Features
RoHS Compliant
Industry-leading quality
Fully Characterized Avalanche Voltage and Current
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective Coss to Simplify Design
IRF7465 Applications
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100KHz
Industry standard surface-mount power package
Capable of being wave-soldered
IRF7465 Relevant information
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