

INFINEON IRF7464
Manufacturer No:
IRF7464
Manufacturer:
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 730mOhm @ 720mA, 10V ±30V 280pF @ 25V 14nC @ 10V 200V 8-SOIC (0.154, 3.90mm Width)
Quantity:


In Stock :5250
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IRF7464 Information
INFINEON IRF7464 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7464.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package
- 8-SO
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2007
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Power Dissipation-Max
- 2.5W Ta
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 730mOhm @ 720mA, 10V
- Vgs(th) (Max) @ Id
- 5.5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 280pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 1.2A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 14nC @ 10V
- Drain to Source Voltage (Vdss)
- 200V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
Download datasheets and manufacturer documentation for INFINEON IRF7464.
Other Related Documents:
IRF7464 Description
IRF7464 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of the IRF7464 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7464 has 8 pins and it is available in Tube packaging way.
IRF7464 Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRF7464 Applications
High frequency DC-DC converters
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF7464 Relevant information
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