INFINEON IRF7459PBF

Manufacturer No:

IRF7459PBF

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) N-Channel Tube 9mOhm @ 12A, 10V ±12V 2480pF @ 10V 35nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)

Quantity:

In Stock :4355

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF7459PBF Information

INFINEON IRF7459PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7459PBF.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154, 3.90mm Width)

Number of Pins
8

Supplier Device Package
8-SO

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
HEXFET®

Published
2006

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Power Dissipation-Max
2.5W Ta

Power Dissipation
2.5W

Turn On Delay Time
10 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
9mOhm @ 12A, 10V

Download datasheets and manufacturer documentation for INFINEON IRF7459PBF.

Datasheets:

infineontechnologies-irf7459pbf-datasheets-7122.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRF7459PBF Overview

A device's maximum input capacitance is 2480pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 11mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.8V 10V) to reduce its overall power consumption.

IRF7459PBF Features

a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 11mOhm
a threshold voltage of 2V
a 20V drain to source voltage (Vdss)