INFINEON IRF7458TR
INFINEON IRF7458TR

INFINEON IRF7458TR

Manufacturer No:

IRF7458TR

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8m ? @ 14A, 16V ±30V 2410pF @ 15V 59nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

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In Stock :6480

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Shipped from:HK Warehouse
Expected Shipping:Wed, May 13 - Thu, May 14, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

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Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

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Step6:Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF7458TR Information

INFINEON IRF7458TR technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7458TR.

  • Type
  • Parameter
  • Mounting Type
  • Surface Mount
  • Package / Case
  • 8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
  • YES
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • HEXFET®
  • JESD-609 Code
  • e3
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Type
  • Parameter
  • Number of Terminations
  • 8
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Matte Tin (Sn)
  • Additional Feature
  • AVALANCHE RATED
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
  • NOT SPECIFIED
  • JESD-30 Code
  • R-PDSO-G8

Download datasheets and manufacturer documentation for INFINEON IRF7458TR.

IRF7458TR Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 280 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2410pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 14A.Peak drain current is 110A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (10V 16V), this device contributes to a reduction in overall power consumption.

IRF7458TR Features


the avalanche energy rating (Eas) is 280 mJ
based on its rated peak drain current 110A.
a 30V drain to source voltage (Vdss)


IRF7458TR Applications


There are a lot of Infineon Technologies
IRF7458TR applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies