VISHAY IRF744PBF

Manufacturer No:

IRF744PBF

Manufacturer:

VISHAY

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 630mOhm @ 5.3A, 10V ±20V 1400pF @ 25V 80nC @ 10V 450V TO-220-3

Quantity:

In Stock :9295

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Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IRF744PBF Information

VISHAY IRF744PBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRF744PBF.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Supplier Device Package
TO-220AB

Weight
6.000006g

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Published
2009

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Channels
1

Power Dissipation-Max
125W Tc

Element Configuration
Single

Turn On Delay Time
8.7 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
630mOhm @ 5.3A, 10V

Download datasheets and manufacturer documentation for VISHAY IRF744PBF.

Datasheets:

vishaysiliconix-irf744-datasheets-8234.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRF744PBF Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.8A amps.In this device, the drain-source breakdown voltage is 450V and VGS=450V, so the drain-source breakdown voltage is 450V in this case.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 630mOhm.A turn-on delay time of 8.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 450V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF744PBF Features

a continuous drain current (ID) of 8.8A
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 58 ns
single MOSFETs transistor is 630mOhm
a 450V drain to source voltage (Vdss)