INFINEON IRF7425PBF

Manufacturer No:

IRF7425PBF

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) P-Channel Tube 8.2m ? @ 15A, 4.5V ±12V 7980pF @ 15V 130nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)

Quantity:

In Stock :6227

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

Payment

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Authenticity Guarantee

All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF7425PBF Information

INFINEON IRF7425PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7425PBF.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154, 3.90mm Width)

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
HEXFET®

Published
2005

JESD-609 Code
e3

Part Status
Discontinued

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
8

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Additional Feature
ULTRA LOW RESISTANCE

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Download datasheets and manufacturer documentation for INFINEON IRF7425PBF.

IRF7425PBF Description

The IRF7425PBF is a -20V single P-channel HEXFET? Power MOSFET utilizing advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The package has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal for a variety of power applications.