INFINEON IRF7420TRPBF

Manufacturer No:

IRF7420TRPBF

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 14m ? @ 11.5A, 4.5V ±8V 3529pF @ 10V 38nC @ 4.5V 12V 8-SOIC (0.154, 3.90mm Width)

Quantity:

In Stock :4179

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Date Code：Within 2 Years

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IRF7420TRPBF Information

INFINEON IRF7420TRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7420TRPBF.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154, 3.90mm Width)

Number of Pins
8

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2006

Type
Parameter

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
8

ECCN Code
EAR99

Resistance
14MOhm

Terminal Finish
Matte Tin (Sn)

Additional Feature
ULTRA LOW RESISTANCE

Subcategory
Other Transistors

Voltage - Rated DC
-12V

Download datasheets and manufacturer documentation for INFINEON IRF7420TRPBF.

IRF7420TRPBF Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3529pF @ 10V.This device conducts a continuous drain current (ID) of 11.5mA, which is the maximum continuous current transistor can conduct.Using VGS=-12V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -12V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 291 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 46A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 12V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).

IRF7420TRPBF Features

a continuous drain current (ID) of 11.5mA
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 291 ns
based on its rated peak drain current 46A.
a 12V drain to source voltage (Vdss)