INFINEON IRF7413ZTR

Manufacturer No:

IRF7413ZTR

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10m ? @ 13A, 10V ±20V 1210pF @ 15V 14nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)

Quantity:

In Stock :7105

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 8 - Sat, May 9, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

IRF7413ZTR Information

INFINEON IRF7413ZTR technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7413ZTR.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154, 3.90mm Width)

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2005

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
8

ECCN Code
EAR99

HTS Code
8541.29.00.95

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

JESD-30 Code
R-PDSO-G8

Download datasheets and manufacturer documentation for INFINEON IRF7413ZTR.

Datasheets:

infineontechnologies-irf7413ztr-datasheets-6463.pdf

IRF7413ZTR Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 32 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1210pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 13A.There is a peak drain current of 100A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).