INFINEON IRF7413ZGTRPBF

Manufacturer No:

IRF7413ZGTRPBF

Manufacturer:

INFINEON

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10mOhm @ 13A, 10V ±20V 1210pF @ 15V 14nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)

Quantity:

In Stock :4965

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Expected Shipping：Fri, May 8 - Sat, May 9, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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IRF7413ZGTRPBF Information

INFINEON IRF7413ZGTRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7413ZGTRPBF.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154, 3.90mm Width)

Number of Pins
8

Supplier Device Package
8-SO

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2009

Part Status
Obsolete

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Power Dissipation-Max
2.5W Ta

Element Configuration
Single

Power Dissipation
2.5W

Turn On Delay Time
8.7 ns

FET Type
N-Channel

Download datasheets and manufacturer documentation for INFINEON IRF7413ZGTRPBF.

Datasheets:

infineontechnologies-irf7413zgtrpbf-datasheets-6440.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

IRF7413ZGTRPBF Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1210pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 10mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRF7413ZGTRPBF Features

a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11 ns
single MOSFETs transistor is 10mOhm
a 30V drain to source voltage (Vdss)